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NDF08N50Z
N-Channel Power MOSFET
500 V, 0.85 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
V DSS
500 V
http://onsemi.com
R DS(ON) (MAX) @ 3.6 A
0.85 W
Rating
Drain ? to ? Source Voltage
Continuous Drain Current R q JC (Note 1)
Continuous Drain Current R q JC
T A = 100 ° C (Note 1)
Pulsed Drain Current,
V GS @ 10 V
Symbol
V DSS
I D
I D
I DM
NDF08N50Z
500
8.5
5.4
34
Unit
V
A
A
A
G (1)
N ? Channel
D (2)
Power Dissipation
Gate ? to ? Source Voltage
Single Pulse Avalanche Energy, I D =
7.5 A
ESD (HBM)
(JESD 22 ? A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T A = 25 ° C) (Figure 14)
Peak Diode Recovery (Note 2)
MOSFET dV/dt
P D
V GS
E AS
V esd
V ISO
dV/dt
dV/dt
35
± 30
190
3500
4500
4.5
60
W
V
mJ
V
V
V/ns
V/ns
NDF08N50ZG
TO ? 220FP
CASE 221D
S (3)
MARKING
DIAGRAM
NDF08N50ZG
or
NDF08N50ZH
AYWW
Continuous Source Current (Body I S 7.5 A
Diode)
Maximum Temperature for Soldering T L 260 ° C
Leads
Operating Junction and T J , T stg ? 55 to 150 ° C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I SD = 7.5 A, di/dt ≤ 100 A/ m s, V DD ≤ BV DSS , T J = +150 ° C
Gate Source
NDF08N50ZH
TO ? 220FP
CASE 221AH
Drain
A = Location Code
Y = Year
WW = Work Week
G, H = Pb ? Free, Halogen ? Free Package
ORDERING INFORMATION
Device
NDF08N50ZG
NDF08N50ZH
Package
TO ? 220FP
(Pb ? Free,
Halogen ? Free)
TO ? 220FP
(Pb ? Free,
Halogen ? Free)
Shipping
50 Units / Rail
50 Units / Rail
? Semiconductor Components Industries, LLC, 2013
July, 2013 ? Rev. 5
1
Publication Order Number:
NDF08N50Z/D
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